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d a t a sh eet product speci?cation file under discrete semiconductors, sc14 september 1995 discrete semiconductors bfg94 npn 6 ghz wideband transistor
september 1995 2 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 features high power gain low noise figure low intermodulation distortion gold metallization ensures excellent reliability. description npn transistor mounted in a plastic sot223 envelope. it is primarily intended for use in communication and instrumentation systems. pinning pin description 1 emitter 2 base 3 emitter 4 collector fig.1 sot223. p age 4 123 msb002 - 1 top view quick reference data note 1. t s is the temperature at the soldering point of the collector tab. symbol parameter conditions min. typ. max. unit v cbo collector-base voltage open emitter -- 15 v v ceo collector-emitter voltage open base -- 12 v i c dc collector current -- 60 ma p tot total power dissipation up to t s = 140 c (note 1) -- 700 mw c re feedback capacitance i c = 0; v ce = 10 v; f = 1 mhz -- 0.8 pf f t transition frequency i c = 45 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c 46 - ghz g um maximum unilateral power gain i c = 45 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c 11.5 13.5 - db v o output voltage i c = 45 ma; v ce = 10 v; d im = - 60 db; r l = 75 w ; f = 800 mhz; t amb = 25 c - 500 - mv p l1 output power at 1 db gain compression i c = 45 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c - 21.5 - dbm
september 1995 3 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 limiting values in accordance with the absolute maximum system (iec 134). thermal resistance note 1. t s is the temperature at the soldering point of the collector tab. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 15 v v ceo collector-emitter voltage open base - 12 v v ebo emitter-base voltage open collector - 2v i c dc collector current - 60 ma p tot total power dissipation up to t s = 140 c (note 1) - 700 mw t stg storage temperature - 65 150 c t j junction temperature - 175 c symbol parameter conditions thermal resistance r th j-s thermal resistance from junction to soldering point up to t s = 140 c (note 1) 50 k/w
september 1995 4 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 characteristics t j = 25 c unless otherwise speci?ed. notes 1. g um is the maximum unilateral power gain, assuming s 12 is zero and 2. d im = - 60 db (din 45004b, par 6.3: 3-tone); i c = 45 ma; v ce = 10 v; r l = 75 w ; t amb = 25 c; v p = v o at d im = - 60 db; f p = 795.25 mhz; v q = v o - 6 db; v r = v o - 6 db; f q = 803.25 mhz; f r = 805.25 mhz; measured at f (p+q - r) = 793.25 mhz. 3. i c = 45 ma; v ce = 10 v; r l = 75 w ; t amb = 25 c; v q = v o = 280 mv; f p = 250 mhz; f q = 560 mhz; measured at f (p+q) = 810 mhz. 4. i c = 45 ma; v ce = 10 v; r l = 50 w ;t amb = 25 c; f p = 1000 mhz; f q = 1001 mhz; measured at f (2p - q) and f (2q - p ). symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = 10 v -- 100 na h fe dc current gain i c = 30 ma; v ce = 5 v 45 90 - i c = 45 ma; v ce = 10 v - 100 - c c collector capacitance i e = i e = 0; v cb = 10 v; f = 1 mhz - 0.9 2 pf c e emitter capacitance i c = i e = 0; v eb = 0.5 v; f = 1 mhz - 2.9 4.5 pf c re feedback capacitance i c = i c = 0; v ce = 10 v; f = 1 mhz - 0.5 0.8 pf f t transition frequency i c = 45 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c 4 -- ghz i c = 30 ma; v ce = 5 v; f = 1 ghz; t amb = 25 c 46 - ghz g um maximum unilateral power gain (note1) i c = 45 ma; v ce = 10 v; f = 1 ghz; t amb = 25 c 11.5 13.5 - db f minimum noise ?gure g s = g opt ; i c = 45 ma; v ce = 10 v; f = 500 mhz - 2.7 - db g s = g opt ; i c = 45 ma; v ce = 10 v; f = 1 ghz - 3 - db v o output voltage note 2 - 500 - mv d 2 second order intermodulation distortion note 3 -- 51 - db p l1 output power at 1 db gain compression i c = 45 ma; v ce = 10 v; r l = 50 w ; t amb = 25 c; measured at f = 1 ghz - 21.5 - dbm ito third order intercept point note 4 - 34 - dbm g um 10 s 21 2 1s 11 2 C ? ?? 1s 22 2 C ? ?? -------------------------------------------------------------- db. log =
september 1995 5 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 fig.2 test circuit for second and third order intermodulation distortion. l1 = l3 = 5 m h micro-choke. l2 = 1 turn copper wire (0.4 mm), internal diameter 4 mm. mbb780 10 k w l2 l1 1 nf output 75 w 247 w 1 nf l3 1 nf dut input 75 w + v bb + v cc 2 pf 33 w 33 w fig.3 measurement set-up for third order intercept point and 1 db gain compression. mbb789 input slug tuner output slug tuner bias tee input output dut test fixture bias tee fig.4 power derating curve. handbook, halfpage 0 50 100 200 800 600 200 0 400 mbb790 150 t s ( c) p tot (mw) fig.5 dc current gain as a function of collector current. v ce = 10 v; t j =25 c handbook, halfpage 0102030 120 0 40 80 mcd087 h fe i (ma) c
september 1995 6 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 fig.6 feedback capacitance as a function of collector-emitter voltage. i c = i c = 0; f = 1 mhz. handbook, halfpage v ce (v) 048 16 1 0 0.8 mbb791 12 0.6 0.4 0.2 c re (pf) fig.7 transition frequency as a function of collector current. v ce = 10 v; f = 1 ghz. handbook, halfpage 01020 40 8 6 2 0 4 mcd089 30 i (ma) c (ghz) t f fig.8 maximum unilateral power gain as a function of frequency. i c = 45 ma; v ce = 10 v. handbook, halfpage mbb792 60 0 20 40 40 400 4000 f (mhz) g um (db) fig.9 maximum unilateral power gain as a function of frequency. i c = 20 ma; v ce = 8 v. handbook, halfpage 40 0 20 30 10 mbb793 10 2 10 3 10 4 10 f (mhz) g um (db)
september 1995 7 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 fig.10 maximum available stable gain as a function of frequency. i c = 20 ma; v ce = 8 v. handbook, halfpage 20 0 10 15 10 mbb794 10 2 10 3 10 4 5 f (mhz) g max (db) fig.11 gain as a function of collector current. v ce = 8 v; f = 1 ghz. g max = maximum available stable gain. g um = maximum unilateral power gain. handbook, halfpage 0 30 20 10 0 50 mbb795 10 20 30 40 gain (db) i (ma) c g max g um fig.12 second order intermodulation distortion as a function of collector current. i c = 45 ma; v ce = 10 v; f (p + q) = 810 mhz. see test circuit, fig.2 handbook, halfpage 10 30 70 20 80 mbb782 50 40 60 i (ma) c d 2 (db) fig.13 third order intermodulation distortion as a function of collector current. i c = 45 ma; v ce = 10 v; f (p + q - r) = 793.25 mhz. see test circuit, fig.2 handbook, halfpage 10 30 70 20 80 mbb781 50 40 60 i (ma) c d 3 (db)
september 1995 8 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 fig.14 minimum noise figure as a function of collector current. v ce = 8 v. handbook, halfpage 4 2 1 0 mcd094 10 1 3 f (db) i (ma) c f = 2 ghz 500 mhz 1 ghz 10 2
september 1995 9 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 handbook, full pagewidth mbb788 0.2 1 2 5 10 0.2 0.5 1 2 5 10 0 + j - j 5 db unstable region stability circle 0.5 1 10 5 2 0.5 0.2 f = 1.80 db min opt 2 db 2.5 db 3 db 4 db fig.15 noise circle. i c = 15 ma; v ce = 10 v; f = 500 mhz. handbook, full pagewidth mbb787 0.2 0.5 1 2 5 10 0.2 0.5 1 2 5 10 0 + j - j 3 db 4 db 110 5 2 0.5 0.2 f = 2.25 db min opt 2.5 db 3.5 db 5 db fig.16 noise circle. i c = 15 ma; v ce = 10 v; f =1 ghz.
september 1995 10 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 handbook, full pagewidth mbb784 10 25 50 100 250 10 25 50 100 250 0 + j ?j 25 3 ghz 10 100 250 50 40 mhz fig.17 common emitter input reflection coefficient (s 11 ). i c = 45 ma; v ce = 10 v. z o =50 w . handbook, full pagewidth mbb786 180 + j - j 0 30 60 90 120 150 150 120 90 60 30 0.4 0.2 0.5 0.3 0.1 40 mhz 3 ghz fig.18 common emitter forward transmission coefficient (s 21 ). i c = 45 ma; v ce = 10 v.
september 1995 11 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 handbook, full pagewidth mbb785 180 + j - j 0 30 60 90 120 150 150 120 90 60 30 40 20 50 30 10 40 mhz 3 ghz fig.19 common emitter reverse transmission coefficient (s 12 ). i c = 45 ma; v ce = 10 v. handbook, full pagewidth mbb783 10 25 50 100 250 10 25 50 100 250 0 + j ?j 10 25 100 250 50 3 ghz 40 mhz fig.20 common emitter output reflection coefficient (s 22 ). i c = 45 ma; v ce = 10 v. z o =50 w .
september 1995 12 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 package outline unit a 1 b p cd e e 1 h e l p qy w v references outline version european projection issue date iec jedec eiaj mm 0.10 0.01 1.8 1.5 0.80 0.60 b 1 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.1 0.2 dimensions (mm are the original dimensions) sot223 96-11-11 97-02-28 w m b p d b 1 e 1 e a a 1 l p q detail x h e e v m a a b b c y 0 2 4 mm scale a x 13 2 4 plastic surface mounted package; collector pad for good heat transfer; 4 leads sot223
september 1995 13 philips semiconductors product speci?cation npn 6 ghz wideband transistor bfg94 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.

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